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| DSSK 16-01A DSSK 16-01AS Power Schottky Rectifier with common cathode IFAV = 2x8 A VRRM = 100 V VF = 0.63 V VRSM V 100 100 VRRM V 100 100 Type A C A TO-220 AB (A-Type) A C A C (TAB) DSSK 16-01A DSSK 16-01AS TO-263 AB (AS-Type) A A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol IFRMS IFAV IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight Conditions TC = 165C; rectangular, d = 0.5 TC = 165C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = 5 A; L = 100 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive Maximum Ratings 35 8 16 120 1.3 0.8 5000 -55...+175 175 -55...+150 A A A A mJ A V/s C C C W Nm g Features * * * * * International standard package Very low VF Extremely low switching losses Low IRM-values Epoxy meets UL 94V-0 Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses TC = 25C mounting torque (Version A only) typical 90 0.4...0.6 2 Dimensions see Outlines.pdf Symbol IR VF Conditions VR = VRRM; TVJ = 25C VR = VRRM; TVJ = 125C IF = 8 A; IF = 8 A; IF = 16 A; TVJ = 125C TVJ = 25C TVJ = 125C 0.5 Characteristic Values typ. max. 0.3 2.5 0.63 0.81 0.75 1.7 mA mA V V V K/W K/W RthJC RthCH(Version A only) Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, Conditions and dimensions. (c) 2005 IXYS All rights reserved 1-2 515 DSSK 16-01A DSSK 16-01AS 20 A 10 IF IR 10 mA T =175C VJ 1 150C 125C 100C TVJ = 175C 150C 125C 25C 1000 pF CT 0.1 100 0.01 75C 50C 0.001 25C TVJ= 25C 1 0.0 0.0001 0.2 0.4 0.6 VF 0.8 V 1.0 0 20 40 60 80 V 100 VR 10 0 20 40 60 80 V 100 VR Fig. 1 Max. forward voltage drop characteristics 40 A 35 30 IF(AV) 25 20 15 15 10 5 0 0 40 80 120 TC 160C 10 5 0 35 W 30 P(AV) 25 d=0.5 DC 20 Fig. 2 Typ. reverse current IR versus reverse voltage Fig. 3 Typ. junction capacitance CT versus reverse voltage VR A IFSM d= DC 0.5 0.33 0.25 0.17 0.08 0 5 10 15 20 25 IF(AV) 30 A tP s Fig. 4 Avg. forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1 K/W ZthJC D=0.5 0.33 0.25 0.17 0.08 0.1 Single Pulse (Thermal Resistance) DSSK 16-01A 0.01 0.0001 Note: All curves are per Diode 0.001 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, Conditions and dimensions. 515 (c) 2005 IXYS All rights reserved 2-2 |
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